Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures
文献类型：期刊论文
| 作者 | G. G. Qin ; Y. Q. Wang ; Y. P. Qiao ; B. R. Zhang ; Z. C. Ma ; W. H. Zong |
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 1999 |
| 卷号 | 74期号:15页码:2182-2184 |
| 关键词 | p-si silicon device films |
| ISSN号 | 0003-6951 |
| 中文摘要 | SiO2/nanometer amorphous Si/SiO2 structures with Si layers of twelve different thicknesses in a range of 0-3.0 nm have been deposited with the two-target alternative magnetron sputtering technique. Electroluminescence (EL) from the Au/SiO2/nanometer amorphous Si/SiO2/p-Si structures has been observed. It is found that the EL peak intensity and peak wavelength synchronously swing with increasing Si layer thickness. The experimental results strongly indicate that the EL originates from luminescence centers in SiO2 layers rather than from the Si layers in the structures. The tunneling of electrons and holes and the quantum confinement effect for them in the nanometer Si layers play important roles in the EL. (C) 1999 American Institute of Physics. [S0003-6951(99)04315-6]. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37475]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. G. Qin,Y. Q. Wang,Y. P. Qiao,et al. Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures[J]. Applied Physics Letters,1999,74(15):2182-2184. |
| APA | G. G. Qin,Y. Q. Wang,Y. P. Qiao,B. R. Zhang,Z. C. Ma,&W. H. Zong.(1999).Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures.Applied Physics Letters,74(15),2182-2184. |
| MLA | G. G. Qin,et al."Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures".Applied Physics Letters 74.15(1999):2182-2184. |
入库方式： OAI收割
来源：金属研究所
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