A novel crystal defect in epitaxial wurtzite gallium nitride film
文献类型：期刊论文
| 作者 | S. Q. Wang ; C. P. Liu |
| 刊名 | Materials Letters
 |
| 出版日期 | 1999 |
| 卷号 | 38期号:3页码:202-207 |
| 关键词 | crystal defect wurtzite GaN epitaxial growth high-resolution electron microscopy molecular-beam epitaxy electron-microscopy characterization gan diffraction boundaries sapphire software growth domain mocvd |
| ISSN号 | 0167-577X |
| 中文摘要 | A novel structure defect in epitaxial wurtzite GaN film is reported in this paper. It is: observed as an isolated (11 (2) over bar 0) planar defect within one large perfect crystal area by high-resolution electron microscopy. By careful analysis of the experimental atomic image it is found that the atomic structure is composed of Ga-Ga and N-N like-atom bonds. It forms a segment of a high-energy boundary by theoretical considerations. The reason for the defect formation is explained from the mechanism of epitaxial film growth. The defect is considered an incipient (11 (2) over bar 0) edge dislocation. (C) 1999 Elsevier Science B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37522]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | S. Q. Wang,C. P. Liu. A novel crystal defect in epitaxial wurtzite gallium nitride film[J]. Materials Letters,1999,38(3):202-207. |
| APA | S. Q. Wang,&C. P. Liu.(1999).A novel crystal defect in epitaxial wurtzite gallium nitride film.Materials Letters,38(3),202-207. |
| MLA | S. Q. Wang,et al."A novel crystal defect in epitaxial wurtzite gallium nitride film".Materials Letters 38.3(1999):202-207. |
入库方式： OAI收割
来源：金属研究所
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