Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure
文献类型：期刊论文
| 作者 | Y. Q. Wang ; T. P. Zhao ; X. M. Cui ; Z. C. Ma ; W. H. Zong ; G. G. Qin |
| 刊名 | Chinese Physics Letters
 |
| 出版日期 | 1999 |
| 卷号 | 16期号:8页码:605-607 |
| 关键词 | visible electroluminescence porous silicon p-si diodes films |
| ISSN号 | 0256-307X |
| 中文摘要 | After an Si oxide layer of 3 nm thickness had been grown by using magnetron sputtering on a p-type Si (100) substrate, an indium tin oxide (ITO) film was deposited onto the Si oxide layer by using electron beam deposition. Electroluminescence (EL) from such an ITO/Si oxide/p-type Si structure was measured under a forward bias of 5 V or more. Its EL power efficiency is about eight times as large as that of a semitransparent Au/Si oxide (3 nm)/p-Si structure. The experimental results indicate that the greater EL power efficiency is due not only to the higher optical transparency of the ITO film compared with Au film in a range of 300 to 900 nm, but also to some new luminescence centers introduced in the Si oxide layer during the ITO deposition process. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37525]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. Q. Wang,T. P. Zhao,X. M. Cui,et al. Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure[J]. Chinese Physics Letters,1999,16(8):605-607. |
| APA | Y. Q. Wang,T. P. Zhao,X. M. Cui,Z. C. Ma,W. H. Zong,&G. G. Qin.(1999).Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure.Chinese Physics Letters,16(8),605-607. |
| MLA | Y. Q. Wang,et al."Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure".Chinese Physics Letters 16.8(1999):605-607. |
入库方式： OAI收割
来源：金属研究所
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