Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure
文献类型：期刊论文
| 作者 | Y. Q. Wang ; T. P. Zhao ; J. Liu ; G. G. Qin |
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 1999 |
| 卷号 | 74期号:25页码:3815-3817 |
| 关键词 | oxidized porous silicon light-emission |
| ISSN号 | 0003-6951 |
| 中文摘要 | We have deposited indium-tin-oxide (ITO) films on p-Si (100) substrates with native Si oxide layers on their surfaces using the electron beam depositing technique. After the ITO/native Si oxide/p-Si structure was annealed in a N-2 ambient, electroluminescence spectra with two peaks at near-ultraviolet (similar to 360 nm) and near-infrared (similar to 820 nm) have been measured under a forward bias of 6 V or larger. The experimental results have been interpreted tentatively using the tunneling-luminescence center process. It is considered that the two electroluminescence peaks originate from two groups of luminescence centers in the native Si oxide layers. The luminescence centers responsible for the near-ultraviolet peak have been discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)05125-6]. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37526]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. Q. Wang,T. P. Zhao,J. Liu,et al. Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure[J]. Applied Physics Letters,1999,74(25):3815-3817. |
| APA | Y. Q. Wang,T. P. Zhao,J. Liu,&G. G. Qin.(1999).Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure.Applied Physics Letters,74(25),3815-3817. |
| MLA | Y. Q. Wang,et al."Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure".Applied Physics Letters 74.25(1999):3815-3817. |
入库方式： OAI收割
来源：金属研究所
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