Lattice-distortion-induced amorphization in indented 110 silicon
文献类型：期刊论文
| 作者 | Y. Q. Wu ; Y. B. Xu |
| 刊名 | Journal of Materials Research
 |
| 出版日期 | 1999 |
| 卷号 | 14期号:3页码:682-687 |
| 关键词 | electron-microscopy crystal indentations transitions phases |
| ISSN号 | 0884-2914 |
| 中文摘要 | High resolution transmission electron microscopy (HRTEM) is used to reveal fine structures of amorphous silicon induced by Vickers indentation and its interface with unindented silicon matrix. Deformation microtwins at the interface and continuous transition from lattice structure of crystal into amorphous structure at the interface are observed. Within the amorphous silicon near the periphery of the indented region, there are many clusters characterized by distorted silicon lattice. A possible mechanism of lattice-distortion-induced amorphization at the periphery of indented silicon is suggested. All the indentations are performed at ambient temperature. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37537]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. Q. Wu,Y. B. Xu. Lattice-distortion-induced amorphization in indented 110 silicon[J]. Journal of Materials Research,1999,14(3):682-687. |
| APA | Y. Q. Wu,&Y. B. Xu.(1999).Lattice-distortion-induced amorphization in indented 110 silicon.Journal of Materials Research,14(3),682-687. |
| MLA | Y. Q. Wu,et al."Lattice-distortion-induced amorphization in indented 110 silicon".Journal of Materials Research 14.3(1999):682-687. |
入库方式： OAI收割
来源：金属研究所
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