中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Large area diamond films growth in multi-filament chemical vapor deposition

文献类型:期刊论文

作者J. Yu ; R. F. Huang ; L. S. Wen ; C. X. Shi
刊名Materials Science and Engineering B-Solid State Materials for Advanced Technology
出版日期1999
卷号57期号:3页码:255-258
关键词large area diamond films gas-centralizing cavity microwave-plasma phase gas
ISSN号0921-5107
中文摘要Large area diamond film growths were carried out on Si wafer 40 mm in diameter using multi-filament chemical vapor deposition (CVD). For the purpose of increasing the utilization ratio of reactive gases and gas how velocity a conduit and gas centralizing cavity were used during deposition. Deposited films were characterized by scanning electron microscope (SERI) and Raman spectroscopy. Thickness variations across the substrate were measured. The experimental results show that high quality diamond films were deposited all over the substrate surface. The film quality and growth rate are uniform across the substrate surface. Due to the introduction of conduit and gas-centralizing cavity the growth rate is rather high and is about 2 mu m h(-1). (C) 1999 Elsevier Science S.A. All rights reserved.
原文出处://WOS:000079046500014
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/37558]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
J. Yu,R. F. Huang,L. S. Wen,et al. Large area diamond films growth in multi-filament chemical vapor deposition[J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology,1999,57(3):255-258.
APA J. Yu,R. F. Huang,L. S. Wen,&C. X. Shi.(1999).Large area diamond films growth in multi-filament chemical vapor deposition.Materials Science and Engineering B-Solid State Materials for Advanced Technology,57(3),255-258.
MLA J. Yu,et al."Large area diamond films growth in multi-filament chemical vapor deposition".Materials Science and Engineering B-Solid State Materials for Advanced Technology 57.3(1999):255-258.

入库方式: OAI收割

来源:金属研究所

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