Large area diamond films growth in multi-filament chemical vapor deposition
文献类型:期刊论文
作者 | J. Yu ; R. F. Huang ; L. S. Wen ; C. X. Shi |
刊名 | Materials Science and Engineering B-Solid State Materials for Advanced Technology
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出版日期 | 1999 |
卷号 | 57期号:3页码:255-258 |
关键词 | large area diamond films gas-centralizing cavity microwave-plasma phase gas |
ISSN号 | 0921-5107 |
中文摘要 | Large area diamond film growths were carried out on Si wafer 40 mm in diameter using multi-filament chemical vapor deposition (CVD). For the purpose of increasing the utilization ratio of reactive gases and gas how velocity a conduit and gas centralizing cavity were used during deposition. Deposited films were characterized by scanning electron microscope (SERI) and Raman spectroscopy. Thickness variations across the substrate were measured. The experimental results show that high quality diamond films were deposited all over the substrate surface. The film quality and growth rate are uniform across the substrate surface. Due to the introduction of conduit and gas-centralizing cavity the growth rate is rather high and is about 2 mu m h(-1). (C) 1999 Elsevier Science S.A. All rights reserved. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/37558] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | J. Yu,R. F. Huang,L. S. Wen,et al. Large area diamond films growth in multi-filament chemical vapor deposition[J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology,1999,57(3):255-258. |
APA | J. Yu,R. F. Huang,L. S. Wen,&C. X. Shi.(1999).Large area diamond films growth in multi-filament chemical vapor deposition.Materials Science and Engineering B-Solid State Materials for Advanced Technology,57(3),255-258. |
MLA | J. Yu,et al."Large area diamond films growth in multi-filament chemical vapor deposition".Materials Science and Engineering B-Solid State Materials for Advanced Technology 57.3(1999):255-258. |
入库方式: OAI收割
来源:金属研究所
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