中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering

文献类型:期刊论文

作者L. P. Zheng ; S. Qiu ; S. Y. Li
刊名Applied Surface Science
出版日期1999
卷号143期号:1-4页码:215-218
关键词molecular dynamics simulation isotopic mass effect zero-fluence low-bombarding-energy sputtering mo-92-mo-100 fractionation mixtures
ISSN号0169-4332
中文摘要Nonstoichiometric effects in the zero-fluence sputtering of a natural Cu(111) target (69.1% Cu-63, 30.9% Cu-65) irradiated with normally incident Ar+ ions from 50 to 1000 eV have been studied by use of a molecular dynamics (MD) simulation code. Calculations show that the isotopic ratios in the normal direction and at oblique angles, their difference, and the total isotopic ratio increase as the bombarding energy decreases. (C) 1999 Elsevier Science B.V. All rights reserved.
原文出处://WOS:000080074200027
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/37594]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
L. P. Zheng,S. Qiu,S. Y. Li. Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering[J]. Applied Surface Science,1999,143(1-4):215-218.
APA L. P. Zheng,S. Qiu,&S. Y. Li.(1999).Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering.Applied Surface Science,143(1-4),215-218.
MLA L. P. Zheng,et al."Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering".Applied Surface Science 143.1-4(1999):215-218.

入库方式: OAI收割

来源:金属研究所

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