Theoretical studies of the g factor of V3+ in III-V semiconductors
文献类型：期刊论文
| 作者 | W. C. Zheng ; S. Y. Wu ; W. Li |
| 刊名 | Semiconductor Science and Technology
 |
| 出版日期 | 1999 |
| 卷号 | 14期号:9页码:883-885 |
| 关键词 | electron-paramagnetic-resonance transition-metal impurities vanadium gaas crystal epr spectra cr2+ gap inp |
| ISSN号 | 0268-1242 |
| 中文摘要 | A two spin-orbit coupling parameter model based on a cluster approach is presented in this paper for the calculations of the g factor for V3+ ions in the cation sites of GaP, InP and GaAs crystals. In this model, differing from the conventional one spin-orbit coupling parameter model, both the contributions from the spin-orbit coupling of the central 3d(2) ion and those of ligand ions are included. By using the parameters obtained from the optical spectra of the studied crystals, the calculated g shifts (g - 2.0023) are in good agreement with the observed values. Various contributions to the g shift are discussed. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37607]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | W. C. Zheng,S. Y. Wu,W. Li. Theoretical studies of the g factor of V3+ in III-V semiconductors[J]. Semiconductor Science and Technology,1999,14(9):883-885. |
| APA | W. C. Zheng,S. Y. Wu,&W. Li.(1999).Theoretical studies of the g factor of V3+ in III-V semiconductors.Semiconductor Science and Technology,14(9),883-885. |
| MLA | W. C. Zheng,et al."Theoretical studies of the g factor of V3+ in III-V semiconductors".Semiconductor Science and Technology 14.9(1999):883-885. |
入库方式： OAI收割
来源：金属研究所
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