Electronic structure of the layered compound Ti3GeC2
文献类型：期刊论文
| 作者 | Y. C. Zhou ; Z. M. Sun |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 1999 |
| 卷号 | 86期号:3页码:1430-1432 |
| ISSN号 | 0021-8979 |
| 关键词 | ceramics |
| 中文摘要 | The electronic structure and properties of layered ceramic Ti3GeC2 have been examined by means of ab initio linear combination of atomic orbital calculations. The calculated band structure shows Ti3GeC2 to be strongly metallic with high densities of states at the Fermi level. The electrical conductivity is dominated by a Ti (2) 3d state with less contribution from Ti (1) 3d, Ge 4p, and C 2p states. The major factors governing the electronic properties are pd hybridization from Ti 3d, Ge 4p, and C 2p states, and p-d bonding stabilizes the structure. (C) 1999 American Institute of Physics. [S0021-8979(99)02015-0]. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37619]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. C. Zhou,Z. M. Sun. Electronic structure of the layered compound Ti3GeC2[J]. Journal of Applied Physics,1999,86(3):1430-1432. |
| APA | Y. C. Zhou,&Z. M. Sun.(1999).Electronic structure of the layered compound Ti3GeC2.Journal of Applied Physics,86(3),1430-1432. |
| MLA | Y. C. Zhou,et al."Electronic structure of the layered compound Ti3GeC2".Journal of Applied Physics 86.3(1999):1430-1432. |
入库方式： OAI收割
来源：金属研究所
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