Electroluminescence from amorphous Si/SiO2 superlattices
文献类型：期刊论文
| 作者 | G. G. Qin ; S. Y. Ma ; Z. C. Ma ; W. H. Zong ; L. P. You |
| 刊名 | Solid State Communications
 |
| 出版日期 | 1998 |
| 卷号 | 106期号:6页码:329-333 |
| 关键词 | au porous-si oxide p-si quantum |
| ISSN号 | 0038-1098 |
| 中文摘要 | Amorphous Si/SiO2 superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of SiO2 layers in ail the superlattices are 1.5 nm and those of Si layers in six types of the superlattices are 1.0, 1.4, 1.8, 2.2, 2.6 and 3.0 nm. Visible electroluminescence (EL) has been observed from the semitransparent Au film/(amorphous Si/SiO2 superlattice)lp type Si structures at a forward bias of 4V or larger. A broad band with two peaks (or shoulders) around 630-650 nm and 510 nm appear in the EL spectra of the structures. The effects of thicknesses of Si layers in the amorphous Si/SiO2 superlattices and of input electrical power on the EL spectra are studied systematically. (C) 1998 Elsevier Science Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37752]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. G. Qin,S. Y. Ma,Z. C. Ma,et al. Electroluminescence from amorphous Si/SiO2 superlattices[J]. Solid State Communications,1998,106(6):329-333. |
| APA | G. G. Qin,S. Y. Ma,Z. C. Ma,W. H. Zong,&L. P. You.(1998).Electroluminescence from amorphous Si/SiO2 superlattices.Solid State Communications,106(6),329-333. |
| MLA | G. G. Qin,et al."Electroluminescence from amorphous Si/SiO2 superlattices".Solid State Communications 106.6(1998):329-333. |
入库方式： OAI收割
来源：金属研究所
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