Low temperature deposition of titanium nitride
文献类型:期刊论文
作者 | L. S. Wen ; R. F. Huang |
刊名 | Journal of Materials Science & Technology
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出版日期 | 1998 |
卷号 | 14期号:4页码:289-293 |
关键词 | pulse bias voltage residual-stress ion-bombardment hard coatings pvd coatings film growth tin arc resistance substrate |
ISSN号 | 1005-0302 |
中文摘要 | Low temperature deposition (LTD) is an actual frontier in materials sicence and engineering, especially for thin film technology. In this paper the fundamentals and processing of low temperature deposition of TiN coating are reviewed. The prerequisites of a low temperature deposition process are enough good densification, hardness and adhesion of the deposited coating. The fundamentals of low temperature deposition are structure zone model and nonequilibrium plasma vapor growth in a combined DC and pulsed electromagnetic fields, namely a combination of a DC bias voltage superimposed by a DC pulsed bias voltage with variable frequency and peak voltage height. Low temperature deposition processing can be realized simply with only stationary electric fields. However, sensitivity of the product quality to the process parameters is the main barrier of this processing in the way to mass production. Low temperature deposition processing using the effects of a combined DC and pulsed electromagnetic fields has attained some promising results for the future commercialization. But they need still further systematic and deep study. The application of low temperature deposition processing is not limited in range of low melting substrate materials. It is also important for internal stress control, defect minimization, microstructure densification and performance improvement for coatings on broad spectrum of substrate materials as well as for different types of applications. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/37819] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | L. S. Wen,R. F. Huang. Low temperature deposition of titanium nitride[J]. Journal of Materials Science & Technology,1998,14(4):289-293. |
APA | L. S. Wen,&R. F. Huang.(1998).Low temperature deposition of titanium nitride.Journal of Materials Science & Technology,14(4),289-293. |
MLA | L. S. Wen,et al."Low temperature deposition of titanium nitride".Journal of Materials Science & Technology 14.4(1998):289-293. |
入库方式: OAI收割
来源:金属研究所
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