Electroluminescence from Au/Si oxynitride film Si structures with the films having different chemical compositions
文献类型：期刊论文
| 作者 | A. P. Li ; L. D. Zhang ; Y. P. Qiao ; G. G. Qin ; Z. C. Ma ; W. H. Zong ; X. Wang ; H. W. Hu |
| 刊名 | Journal of Physics-Condensed Matter
 |
| 出版日期 | 1997 |
| 卷号 | 9期号:24页码:5245-5252 |
| 关键词 | silicon-nitride films vapor-deposition optical-properties amorphous films oxide spectra |
| ISSN号 | 0953-8984 |
| 中文摘要 | Si oxynitride films (with thicknesses of about 40-80 Angstrom) with different chemical compositions were deposited on Si wafers by three kinds of method: electron cyclotron resonance (ECR) chemical vapour deposition, magnetron sputtering, and direct nitration of Si wafers in an ECR plasma. The chemical composition of Si oxynitride films was examined by x-ray photoelectron spectroscopy. Electroluminescence (EL) from the semitransparent Au/Si oxynitride film/Si structures, and the effects of chemical composition of the films on EL have been studied. The dependence of EL on thermal annealing has also been reported. Experimental results show that the dominant EL peak position varies from 640 to 700 nm, but the shoulders at about 520 and 820 nm have no apparent shift when the Si content in the Si oxynitride films increases. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37992]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | A. P. Li,L. D. Zhang,Y. P. Qiao,et al. Electroluminescence from Au/Si oxynitride film Si structures with the films having different chemical compositions[J]. Journal of Physics-Condensed Matter,1997,9(24):5245-5252. |
| APA | A. P. Li.,L. D. Zhang.,Y. P. Qiao.,G. G. Qin.,Z. C. Ma.,...&H. W. Hu.(1997).Electroluminescence from Au/Si oxynitride film Si structures with the films having different chemical compositions.Journal of Physics-Condensed Matter,9(24),5245-5252. |
| MLA | A. P. Li,et al."Electroluminescence from Au/Si oxynitride film Si structures with the films having different chemical compositions".Journal of Physics-Condensed Matter 9.24(1997):5245-5252. |
入库方式： OAI收割
来源：金属研究所
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