UV irradiation-induced defect study of GeO2-SiO2 glasses by Raman spectroscopy
文献类型：期刊论文
| 作者 | F. X. Liu ; J. Y. Qian ; X. L. Wang ; L. Liu ; H. Ming |
| 刊名 | Physical Review B
 |
| 出版日期 | 1997 |
| 卷号 | 56期号:6页码:3066-3071 |
| ISSN号 | 0163-1829 |
| 关键词 | optical fibers vibrational-spectra vitreous sio2 photorefractivity photosensitivity stability dynamics centers silica model |
| 中文摘要 | Microstructural changes of two GeO2-SiO2 glass compositions (with 5 and 13 mol % GeO2) irradiated with 5 and 6.4 eV light have been investigated by Raman spectroscopy. The low-frequency ''Boson'' bands at 50 cm(-1) of both samples shift upward upon irradiation, but their intensities have opposite changes. It indicates that thermal damage of the surface by energetic UV photons is correlated with the Ge content of the glass. The intensities of both defect lines D-1 and D-2 increase with respect to omega(1) and omega(3) and the omega(1) and omega(3) bands shift to higher frequencies which means a reduction of the Si-O-Si bond angle upon irradiation. This may be due to the change in ring statistics in favor of smaller rings, that is, sixfold rings transform to threefold and fourfold rings upon UV irradiation. The opposite changes in intensity of omega(1) and omega(3) bands result from the variation of the network structure. UV photoinduced bond breaking allows structural relaxation of the nonequilibrium glass network that leads to photoinduced Raman changes and the photoinduced index changes in photosensitive glasses. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38013]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | F. X. Liu,J. Y. Qian,X. L. Wang,et al. UV irradiation-induced defect study of GeO2-SiO2 glasses by Raman spectroscopy[J]. Physical Review B,1997,56(6):3066-3071. |
| APA | F. X. Liu,J. Y. Qian,X. L. Wang,L. Liu,&H. Ming.(1997).UV irradiation-induced defect study of GeO2-SiO2 glasses by Raman spectroscopy.Physical Review B,56(6),3066-3071. |
| MLA | F. X. Liu,et al."UV irradiation-induced defect study of GeO2-SiO2 glasses by Raman spectroscopy".Physical Review B 56.6(1997):3066-3071. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。