Initial interface reaction in indium/amorphous selenium multilayer thin films
文献类型：期刊论文
| 作者 | K. Lu ; J. H. Perepezko ; K. A. Lindahl ; B. Lanning |
| 刊名 | Philosophical Magazine Letters
 |
| 出版日期 | 1997 |
| 卷号 | 76期号:4页码:299-305 |
| 关键词 | nucleation growth |
| ISSN号 | 0950-0839 |
| 中文摘要 | Interface reactions between In and amorphous Se (a-Se) layers have been studied using differential scanning calorimetry (DSC) in vapour-deposited multilayer thin films. The initial interface reaction started at around 100 degrees C with the formation of an In2Se stoichiometric compound. A kinetic analysis indicated that the interface reaction is characterized by the two-dimensional growth of preexisting In2Se nuclei to coalescence in the plane of the original In-a-Se interface. The heating onset and peak temperatures and the isothermal peak time for the reaction in the DSC scans were found to be independent of the multilayer modulation wavelength, implying a constant nucleation site density with different multilayer wavelengths. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38040]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | K. Lu,J. H. Perepezko,K. A. Lindahl,et al. Initial interface reaction in indium/amorphous selenium multilayer thin films[J]. Philosophical Magazine Letters,1997,76(4):299-305. |
| APA | K. Lu,J. H. Perepezko,K. A. Lindahl,&B. Lanning.(1997).Initial interface reaction in indium/amorphous selenium multilayer thin films.Philosophical Magazine Letters,76(4),299-305. |
| MLA | K. Lu,et al."Initial interface reaction in indium/amorphous selenium multilayer thin films".Philosophical Magazine Letters 76.4(1997):299-305. |
入库方式： OAI收割
来源：金属研究所
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