High-resolution transmission electron microscopy investigation of a stacking fault in beta-Si3N4
文献类型：期刊论文
| 作者 | X. G. Ning ; D. S. Wilkinson ; G. C. Weatherly ; H. Q. Ye |
| 刊名 | Journal of Materials Science
 |
| 出版日期 | 1997 |
| 卷号 | 32期号:6页码:1431-1436 |
| 关键词 | silicon-nitride diffraction composite ceramics |
| ISSN号 | 0022-2461 |
| 中文摘要 | High-resolution transmission electron microscopy images of stacking faults on (001) and (<(1)over bar 01>) planes in a beta-Si3N4 whisker were obtained and compared to image simulations. This procedure showed that the atomic structure of the four atomic planes around the (001) stacking fault plane in the beta-phase is very similar to that of the unit cell of alpha-Si3N4 crystal. The stacking fault was observed to climb under electron irradiation in the microscope. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38054]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. G. Ning,D. S. Wilkinson,G. C. Weatherly,et al. High-resolution transmission electron microscopy investigation of a stacking fault in beta-Si3N4[J]. Journal of Materials Science,1997,32(6):1431-1436. |
| APA | X. G. Ning,D. S. Wilkinson,G. C. Weatherly,&H. Q. Ye.(1997).High-resolution transmission electron microscopy investigation of a stacking fault in beta-Si3N4.Journal of Materials Science,32(6),1431-1436. |
| MLA | X. G. Ning,et al."High-resolution transmission electron microscopy investigation of a stacking fault in beta-Si3N4".Journal of Materials Science 32.6(1997):1431-1436. |
入库方式： OAI收割
来源：金属研究所
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