Theory on the quantum confinement luminescence center model for nanocrystalline and porous Si
文献类型：期刊论文
| 作者 | G. Qin ; G. G. Qin |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 1997 |
| 卷号 | 82期号:5页码:2572-2579 |
| 关键词 | silicon films light-emission photoluminescence mechanism absorption layers nm |
| ISSN号 | 0021-8979 |
| 中文摘要 | This article demonstrates, from the theoretical paint off view, chat owing to the phonon-assisted relaxation rate of the excited electron-hole pair's transiting to lower states decreases as the scale of Si particle is reduced, the optically excited electron-hole pair in the nanometer silicon particle with sufficient small scale generally tunnel inter the SiOx layers which enclose the Si particles and recombine radiatively through the luminescence centers there to emit visible Sight rather than recombine radiatively in the Si particles. It is proved also that when the density of the luminescence center is 2.5X10(22)/m(3) the upper limit of the average scale of the nanometer silicon particles in the ensemble capable of emitting red light in room temperature is around 8.7 nm, which is. much bigger than the generally estimated value of 3 nm. (C) 1997 American Institute of Physics. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38065]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. Qin,G. G. Qin. Theory on the quantum confinement luminescence center model for nanocrystalline and porous Si[J]. Journal of Applied Physics,1997,82(5):2572-2579. |
| APA | G. Qin,&G. G. Qin.(1997).Theory on the quantum confinement luminescence center model for nanocrystalline and porous Si.Journal of Applied Physics,82(5),2572-2579. |
| MLA | G. Qin,et al."Theory on the quantum confinement luminescence center model for nanocrystalline and porous Si".Journal of Applied Physics 82.5(1997):2572-2579. |
入库方式： OAI收割
来源：金属研究所
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