Photoluminescence from mechanically milled Si and SiO2 powders
文献类型：期刊论文
| 作者 | T. D. Shen ; I. Shmagin ; C. C. Koch ; R. M. Kolbas ; Y. Fahmy ; L. Bergman ; R. J. Nemanich ; M. T. McClure ; Z. Sitar ; M. X. Quan |
| 刊名 | Physical Review B
 |
| 出版日期 | 1997 |
| 卷号 | 55期号:12页码:7615-7623 |
| 关键词 | oxidized porous silicon nanocrystalline silicon light-emission quantum confinement raman-scattering defect centers amorphous sio2 point-defects oxide luminescence |
| ISSN号 | 0163-1829 |
| 中文摘要 | The photoluminescence (PL) in as-received and milled Si and SiO2 powder is reported. The Si and SiO2 powder is characterized by chemical analysis, Raman scattering, x-ray photoelectron spectra, infrared absorption, x-ray diffraction, and differential thermal analysis. The results indicate that the Si powder has amorphous Si oxide and suboxide surface layers. The milling of Si powder results in the formation of nanocrystalline/amorphous Si components. An amorphous SiO2 component is formed by milling crystalline SiO2. The PL spectra for as-received Si, milled Si, and SiO2 powder exhibit similar peak shapes, peak maxima, and full width at half maximum values. For both the as-received and the milled Si powder, experimental results appear to exclude mechanisms for PL related to an amorphous Si component or Si-H or Si-OH bonds, or the quantum confinement effect. Similarly, for milled SiO2 powder mechanisms for PL do not appear related to Si-H or Si-OH bonds. Instead the greatly increased intensity of PL for milled SiO2 can be related to both the increased volume fraction of the amorphous SiO2 component and the increased density of defects introduced in the amorphous SiO2 upon milling. It is suggested that the PL for as-received Si, milling-induced nanocrystalline/amorphous Si, and milled SiO2 results from defects, such as the nonbridging oxygen hole center, in the amorphous Si suboxide and/or SiO2 components existing in these powder samples. The PL measurement for milled SiO2 is dependent on air pressure whereas that for as-received SiO2 is not, suggesting that new emitting centers are formed by milling. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38072]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | T. D. Shen,I. Shmagin,C. C. Koch,et al. Photoluminescence from mechanically milled Si and SiO2 powders[J]. Physical Review B,1997,55(12):7615-7623. |
| APA | T. D. Shen.,I. Shmagin.,C. C. Koch.,R. M. Kolbas.,Y. Fahmy.,...&M. X. Quan.(1997).Photoluminescence from mechanically milled Si and SiO2 powders.Physical Review B,55(12),7615-7623. |
| MLA | T. D. Shen,et al."Photoluminescence from mechanically milled Si and SiO2 powders".Physical Review B 55.12(1997):7615-7623. |
入库方式： OAI收割
来源：金属研究所
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