Continuous CoSi2 layers in silicon synthesized by Co-ion implantation
文献类型：期刊论文
| 作者 | J. Z. Zhang ; X. Y. Ye ; J. Chang ; S. Bernard |
| 刊名 | Materials Letters
 |
| 出版日期 | 1997 |
| 卷号 | 32期号:2-3页码:121-126 |
| 关键词 | silicide cobalt CoSi2 ion implantation buried cosi2 beam synthesis beta-fesi2 growth |
| ISSN号 | 0167-577X |
| 中文摘要 | CoSi2 thin layers were fabricated by Co-ion implantation into Si(100) and subsequent annealing. The ion implantation was carried out in a metal vapour vacuum are (MEVVA) source implanter. Various doses of Co ions were implanted using doses of 1.6 x 10(17) to 7.5 x 10(17) Co/cm(2) at an extraction voltage of 40 kV and ion current densities of 60 and 150 mu A/cm(2). It was found that the thicknesses of continuous CoSi2 layers after annealing within Si(100) increased with increasing implantation dose, and ranged from 43 to 60 nm for the implantation doses used in this work. The specific resistivity of implanted samples after annealing was between 12.1 and 13.8 mu Omega cm at room temperature. The results indicated that the ion current density played an important role in the structure of the CoSi2 layer, and annealing can significantly improve the electrical property of the CoSi2 layers. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38201]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | J. Z. Zhang,X. Y. Ye,J. Chang,et al. Continuous CoSi2 layers in silicon synthesized by Co-ion implantation[J]. Materials Letters,1997,32(2-3):121-126. |
| APA | J. Z. Zhang,X. Y. Ye,J. Chang,&S. Bernard.(1997).Continuous CoSi2 layers in silicon synthesized by Co-ion implantation.Materials Letters,32(2-3),121-126. |
| MLA | J. Z. Zhang,et al."Continuous CoSi2 layers in silicon synthesized by Co-ion implantation".Materials Letters 32.2-3(1997):121-126. |
入库方式： OAI收割
来源：金属研究所
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