Electroluminescence from an Au-extra-thin silicon oxynitride film Si structure
文献类型：期刊论文
| 作者 | A. P. Li ; L. D. Zhang ; Y. X. Zhang ; G. Qin ; G. G. Qin |
| 刊名 | Journal of Physics-Condensed Matter
 |
| 出版日期 | 1996 |
| 卷号 | 8期号:14页码:L223-L228 |
| 关键词 | chemical-vapor deposition amorphous films porous silicon nitride films luminescence spectra |
| ISSN号 | 0953-8984 |
| 中文摘要 | The electroluminescence (EL) at room temperature from Au-extra-thin silicon oxynitride (ETSON)-p-Si and Au-ETSON-n-Si structures is reported. The ETSON films (similar to 80 Angstrom) were deposited by the rf magnetron sputtering technique, and Si3N4-Si composite targets were used (the area ratio of Si to Si3N4 was similar to 6%). The EL spectra were measured under forward bias greater than or equal to 4 V after the ETSON films had been annealed at 300, 600, 800, and 1000 degrees C in N-2 ambient for 30 min. The Au-ETSON-p-Si structure has a dominant EL band with peak wavelength around 680 nm, and its integrated EL efficiency is an order of magnitude higher than that from a Au-extra-thin Si-rich SiO2 (ETSSO) film (similar to 80 Angstrom)-p-Si structure. Distinguishing it from the Au-ETSSO-Si structure, which emits visible EL only when it is fabricated on p-Si, EL can also be observed in the Au-ETSON-n-Si structure under forward bias, and the two dominant EL bands peak one at around 700 nm and one at around 800 nm. Electron beam irradiation induces a new EL band peaked at 500 nm in the EL spectrum from an Au-ETSON-p-Si structure. From the experimental results it is suggested that electrons and holes from opposite sides tunnel into the ETSON layer and recombine radiatively at luminescence centres there. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38309]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | A. P. Li,L. D. Zhang,Y. X. Zhang,et al. Electroluminescence from an Au-extra-thin silicon oxynitride film Si structure[J]. Journal of Physics-Condensed Matter,1996,8(14):L223-L228. |
| APA | A. P. Li,L. D. Zhang,Y. X. Zhang,G. Qin,&G. G. Qin.(1996).Electroluminescence from an Au-extra-thin silicon oxynitride film Si structure.Journal of Physics-Condensed Matter,8(14),L223-L228. |
| MLA | A. P. Li,et al."Electroluminescence from an Au-extra-thin silicon oxynitride film Si structure".Journal of Physics-Condensed Matter 8.14(1996):L223-L228. |
入库方式： OAI收割
来源：金属研究所
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