中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of low temperature treatment regime on residual stress state near interface in bonded SiC/6061Al compounds

文献类型:期刊论文

作者H. Li ; J. B. Li ; L. Z. Sun ; S. X. Li ; Z. G. Wang
刊名Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing
出版日期1996
卷号221期号:1-2页码:179-186
关键词finite element method low temperature treatment residual stress state composite matrix
ISSN号0921-5093
中文摘要The residual stress distributions near the interface in diffusion-bonded SiC/6061Al model samples of various treated states were determined by means of X-ray stress measurement and finite element method (FEM). It was demonstrated that the low temperature treatment and subsequent reheating to room temperature might be used to reduce or even eliminate the residual stresses. The results of FEM calculations are in agreement with the trend of the experimental results, but show higher magnitudes of computed residual stresses. The reasons for the deviation are explained.
原文出处://WOS:A1996WB64200021
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/38316]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
H. Li,J. B. Li,L. Z. Sun,et al. Effect of low temperature treatment regime on residual stress state near interface in bonded SiC/6061Al compounds[J]. Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing,1996,221(1-2):179-186.
APA H. Li,J. B. Li,L. Z. Sun,S. X. Li,&Z. G. Wang.(1996).Effect of low temperature treatment regime on residual stress state near interface in bonded SiC/6061Al compounds.Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing,221(1-2),179-186.
MLA H. Li,et al."Effect of low temperature treatment regime on residual stress state near interface in bonded SiC/6061Al compounds".Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing 221.1-2(1996):179-186.

入库方式: OAI收割

来源:金属研究所

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