Growth characteristics of mercuric iodide single crystal
文献类型：期刊论文
| 作者 | Z. H. Li ; W. T. Li ; J. Liu ; S. F. Zhu ; B. J. Zhao ; S. J. Yin ; G. X. Chen ; H. Yuan ; H. P. Xu |
| 刊名 | Crystal Research and Technology
 |
| 出版日期 | 1996 |
| 卷号 | 31期号:8页码:979-983 |
| 关键词 | vapor alpha-hgi2 hgi2 |
| ISSN号 | 0232-1300 |
| 中文摘要 | The HgI2 single crystal with few large smooth faces, high quality and 360 g in weight has been grown by a new technique of modified vapour phase located point method, and the growth characteristics of HgI2 single crystals have been investigated in detail It is found by means of X-ray diffraction that the crystals grown with the c-axis parallel or perpendicular to the pedestal plane have both the prism faces {110}. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38328]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Z. H. Li,W. T. Li,J. Liu,et al. Growth characteristics of mercuric iodide single crystal[J]. Crystal Research and Technology,1996,31(8):979-983. |
| APA | Z. H. Li.,W. T. Li.,J. Liu.,S. F. Zhu.,B. J. Zhao.,...&H. P. Xu.(1996).Growth characteristics of mercuric iodide single crystal.Crystal Research and Technology,31(8),979-983. |
| MLA | Z. H. Li,et al."Growth characteristics of mercuric iodide single crystal".Crystal Research and Technology 31.8(1996):979-983. |
入库方式： OAI收割
来源：金属研究所
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