Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder
文献类型：期刊论文
| 作者 | G. G. Qin ; J. Lin ; J. Q. Duan ; G. Q. Yao |
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 1996 |
| 卷号 | 69期号:12页码:1689-1691 |
| ISSN号 | 0003-6951 |
| 关键词 | light-emission visible luminescence optical-properties photoluminescence excitation mechanism centers films |
| 中文摘要 | Ultraviolet (UV) light emission with almost the same peak wavelengths from thermally oxidized porous silicon (OPS) (340, 355, and 370 nm) and SiO2 powder (340, 350, and 370 nm) has been observed. Photoluminescence excitation spectra of OPS without Si nanoscale particles (SNP) and those of SiO2 powder are very similar, however, very different from those of the OPS with SNP. Three types of luminescence centers with luminescence wavelengths around 350 nm are responsible for UV light emission, and photoexcitation in OPS with SNP occurs in SNP-as well as in Si oxide layers covering SNP. (C) 1996 American Institute of Physics. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38378]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. G. Qin,J. Lin,J. Q. Duan,et al. Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder[J]. Applied Physics Letters,1996,69(12):1689-1691. |
| APA | G. G. Qin,J. Lin,J. Q. Duan,&G. Q. Yao.(1996).Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder.Applied Physics Letters,69(12),1689-1691. |
| MLA | G. G. Qin,et al."Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder".Applied Physics Letters 69.12(1996):1689-1691. |
入库方式： OAI收割
来源：金属研究所
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