Investigation of film growth for amorphous Nb/Si multilayers
文献类型：期刊论文
| 作者 | M. Zhang ; W. K. Wang |
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 1996 |
| 卷号 | 69期号:21页码:3182-3184 |
| 关键词 | x-ray-diffraction interfacial roughness superlattices deposition diffusion |
| ISSN号 | 0003-6951 |
| 中文摘要 | In this letter, film growth for amorphous Nb/Si multilayers has been studied by using x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). Results from XRD and XTEM show that the structures of amorphous Nb/Si multilayers deposited at room temperature and 550 degrees C are quite different. The influences of surface mobility of adstoms and interfacial reaction on interfacial roughness are discussed. (C) 1996 American Institute of Physics. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38480]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | M. Zhang,W. K. Wang. Investigation of film growth for amorphous Nb/Si multilayers[J]. Applied Physics Letters,1996,69(21):3182-3184. |
| APA | M. Zhang,&W. K. Wang.(1996).Investigation of film growth for amorphous Nb/Si multilayers.Applied Physics Letters,69(21),3182-3184. |
| MLA | M. Zhang,et al."Investigation of film growth for amorphous Nb/Si multilayers".Applied Physics Letters 69.21(1996):3182-3184. |
入库方式： OAI收割
来源：金属研究所
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