中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth of cerium(IV) oxide films by the electrochemical generation of base method

文献类型:期刊论文

作者Y. C. Zhou ; J. A. Switzer
刊名Journal of Alloys and Compounds
出版日期1996
卷号237期号:1-2页码:40913
关键词cerium oxide thin films electrochemical deposition powders oxygen ceo2
ISSN号0925-8388
中文摘要Cerium(IV) oxide films were deposited electrochemically on 430 stainless steel and (100)-oriented highly doped degenerate p-type single-crystal silicon in aqueous solution by the electrogeneration of base method. The as-prepared films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The results demonstrated that the as-deposited material was faceted cerium oxide with the fluorite structure. Grain size of the film was found to increase from 6 to 16 nm when the bath temperature varied from 26 to 80 degrees C, but to decrease from 18 to 6 nm when the applied current density increased from 0.5 to 3.0 mA cm(-2). The films were observed to have no preferred orientation.
原文出处://WOS:A1996UK44000001
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/38515]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Y. C. Zhou,J. A. Switzer. Growth of cerium(IV) oxide films by the electrochemical generation of base method[J]. Journal of Alloys and Compounds,1996,237(1-2):40913.
APA Y. C. Zhou,&J. A. Switzer.(1996).Growth of cerium(IV) oxide films by the electrochemical generation of base method.Journal of Alloys and Compounds,237(1-2),40913.
MLA Y. C. Zhou,et al."Growth of cerium(IV) oxide films by the electrochemical generation of base method".Journal of Alloys and Compounds 237.1-2(1996):40913.

入库方式: OAI收割

来源:金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。