中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Synthesis of high-quality AgGaSe2 polycrystalline material by the melt temperature oscillation method

文献类型:期刊论文

作者S. F. Zhu ; B. J. Zhao ; J. Liu ; H. G. Jiang ; Z. H. Li ; W. T. Li
刊名Materials Chemistry and Physics
出版日期1996
卷号46期号:1页码:100-102
关键词silver gallium diselenide polycrystal synthesis melt temperature oscillation infrared applications optical-quality crystals growth
ISSN号0254-0584
中文摘要The melt temperature oscillation method (MTOM) has been used to synthesize high-quality AgGaSe2 polycrystalline materials. The mechanism and advantages of MTOM for synthesizing a single phase of AgGaSe2 are discussed. It is found that the polycrystalline material synthesized by MTOM is pure single phase, is free of interior voids and has a high mass density, which is better than that synthesized by the conventional method. The crack-free, as-grown single crystal of AgGaSe2 grown using polycrystalline materials by MTOM has a high infrared transmission (62.4% at 10.6 mu m), which is greater than that of the as-grown crystal synthesized using polycrystalline materials by the conventional method, even after the annealing treatment. MTOM is a new, effective method for synthesizing high-quality polycrystalline materials.
原文出处://WOS:A1996VQ36100017
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/38517]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
S. F. Zhu,B. J. Zhao,J. Liu,et al. Synthesis of high-quality AgGaSe2 polycrystalline material by the melt temperature oscillation method[J]. Materials Chemistry and Physics,1996,46(1):100-102.
APA S. F. Zhu,B. J. Zhao,J. Liu,H. G. Jiang,Z. H. Li,&W. T. Li.(1996).Synthesis of high-quality AgGaSe2 polycrystalline material by the melt temperature oscillation method.Materials Chemistry and Physics,46(1),100-102.
MLA S. F. Zhu,et al."Synthesis of high-quality AgGaSe2 polycrystalline material by the melt temperature oscillation method".Materials Chemistry and Physics 46.1(1996):100-102.

入库方式: OAI收割

来源:金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。