Investigation of kinetics model of dc reactive sputtering
文献类型:期刊论文
作者 | S. L. Zhu ; F. H. Wang ; W. T. Wu |
刊名 | Science in China Series E-Technological Sciences |
出版日期 | 1996 |
卷号 | 39期号:4页码:375-385 |
ISSN号 | 1006-9321 |
关键词 | reactive sputtering kinetics model physical sputtering model |
中文摘要 | A novel physical sputtering kinetics model for reactive sputtering is presented. Reactive gas gettering effects and interactions among the characteristic parameters have been taken into account in the model. The data derived from the model accorded fairly well with experimental results. The relationship between the values of initial oxide coverage on the target and the ready states was depicted in the model. This relationship gives reasons for the difference of the threshold of reactive gas fluxes (Q*) from the metal sputtering region to the oxide sputtering region and in reverse direction. The discontinuities in oxide coverage on the target surface (theta) versus reactive gas fluxes (Q) are referred to as the effects of reactive gas partial pressure (p(r)) upon the forming rates of oxide on the surfaces of target (V-0). The diversity of the oxygen flux threshold results from the variance of the initial values of oxide coverage on target. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/38518] |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | S. L. Zhu,F. H. Wang,W. T. Wu. Investigation of kinetics model of dc reactive sputtering[J]. Science in China Series E-Technological Sciences,1996,39(4):375-385. |
APA | S. L. Zhu,F. H. Wang,&W. T. Wu.(1996).Investigation of kinetics model of dc reactive sputtering.Science in China Series E-Technological Sciences,39(4),375-385. |
MLA | S. L. Zhu,et al."Investigation of kinetics model of dc reactive sputtering".Science in China Series E-Technological Sciences 39.4(1996):375-385. |
入库方式: OAI收割
来源:金属研究所
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