中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation of kinetics model of dc reactive sputtering

文献类型:期刊论文

作者S. L. Zhu ; F. H. Wang ; W. T. Wu
刊名Science in China Series E-Technological Sciences
出版日期1996
卷号39期号:4页码:375-385
ISSN号1006-9321
关键词reactive sputtering kinetics model physical sputtering model
中文摘要A novel physical sputtering kinetics model for reactive sputtering is presented. Reactive gas gettering effects and interactions among the characteristic parameters have been taken into account in the model. The data derived from the model accorded fairly well with experimental results. The relationship between the values of initial oxide coverage on the target and the ready states was depicted in the model. This relationship gives reasons for the difference of the threshold of reactive gas fluxes (Q*) from the metal sputtering region to the oxide sputtering region and in reverse direction. The discontinuities in oxide coverage on the target surface (theta) versus reactive gas fluxes (Q) are referred to as the effects of reactive gas partial pressure (p(r)) upon the forming rates of oxide on the surfaces of target (V-0). The diversity of the oxygen flux threshold results from the variance of the initial values of oxide coverage on target.
原文出处://WOS:A1996WB01000005
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/38518]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
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S. L. Zhu,F. H. Wang,W. T. Wu. Investigation of kinetics model of dc reactive sputtering[J]. Science in China Series E-Technological Sciences,1996,39(4):375-385.
APA S. L. Zhu,F. H. Wang,&W. T. Wu.(1996).Investigation of kinetics model of dc reactive sputtering.Science in China Series E-Technological Sciences,39(4),375-385.
MLA S. L. Zhu,et al."Investigation of kinetics model of dc reactive sputtering".Science in China Series E-Technological Sciences 39.4(1996):375-385.

入库方式: OAI收割

来源:金属研究所

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