HYDROGENIC IMPURITY STATES IN LATERAL-SURFACE-MODULATION QUANTUM WIRES
文献类型:期刊论文
作者 | Z. Y. Deng ; H. Sun ; S. W. Gu |
刊名 | Communications in Theoretical Physics
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出版日期 | 1994 |
卷号 | 21期号:1页码:17-24 |
关键词 | well wires optical anisotropy binding-energy confinement model |
ISSN号 | 0253-6102 |
中文摘要 | We calculate hydrogenic impurity binding energy in quasi-one-dimensional GaAs/AlAs quantum wires with periodical lateral surface structure by making use of a variational approach. By a coordinate transformation, the structured interfaces of the wires are transformed into planar ones so that the boundary conditions of the electronic wave functions can be satisfied exactly on the interfaces. The dependence of the binding energies on the positions of the impurities and on the lateral surface structures is studied. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/38807] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | Z. Y. Deng,H. Sun,S. W. Gu. HYDROGENIC IMPURITY STATES IN LATERAL-SURFACE-MODULATION QUANTUM WIRES[J]. Communications in Theoretical Physics,1994,21(1):17-24. |
APA | Z. Y. Deng,H. Sun,&S. W. Gu.(1994).HYDROGENIC IMPURITY STATES IN LATERAL-SURFACE-MODULATION QUANTUM WIRES.Communications in Theoretical Physics,21(1),17-24. |
MLA | Z. Y. Deng,et al."HYDROGENIC IMPURITY STATES IN LATERAL-SURFACE-MODULATION QUANTUM WIRES".Communications in Theoretical Physics 21.1(1994):17-24. |
入库方式: OAI收割
来源:金属研究所
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