THE STUDY OF LATTICE STRAIN AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES
文献类型：期刊论文
| 作者 | Z. P. Guan ; S. H. Song ; G. H. Fan ; X. W. Fan ; Y. G. Peng ; Y. K. Wu |
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 1994 |
| 卷号 | 138期号:1-4页码:534-537 |
| ISSN号 | 0022-0248 |
| 关键词 | epitaxial multilayers dislocations defects |
| 中文摘要 | The structural properties of ZnSe-ZnS strained-layer superlattices (SLSs) grown on GaAs (100) by atmospheric-pressure metalorganic chemical vapor deposition (AP-MOCVD) were studied using high-resolution transmission electron microscopy (HRTEM). The type and distribution of the defects in ZnSe-ZnS SLS are related to the surface quality of GaAs substrate, of the buffer layer and the thickness of each layer for ZnSe and ZnS in SLS. In this work we noticed that there are stacking faults (SFs), mismatch defects (MDs) and microtwins (MTs) in ZnSe1-xSx buffer layer at interfacial steps due to the GaAs surface not being smooth, and the dislocation can penetrate the ZnSe-ZnS SLS layer. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38813]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Z. P. Guan,S. H. Song,G. H. Fan,et al. THE STUDY OF LATTICE STRAIN AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES[J]. Journal of Crystal Growth,1994,138(1-4):534-537. |
| APA | Z. P. Guan,S. H. Song,G. H. Fan,X. W. Fan,Y. G. Peng,&Y. K. Wu.(1994).THE STUDY OF LATTICE STRAIN AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES.Journal of Crystal Growth,138(1-4),534-537. |
| MLA | Z. P. Guan,et al."THE STUDY OF LATTICE STRAIN AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES".Journal of Crystal Growth 138.1-4(1994):534-537. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。