CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING
文献类型：期刊论文
| 作者 | S. X. Jin ; M. H. Yuan ; L. P. Wang ; H. Z. Song ; H. P. Wang ; G. G. Qin |
| 刊名 | Science in China Series a-Mathematics Physics Astronomy
 |
| 出版日期 | 1994 |
| 卷号 | 37期号:6页码:730-737 |
| 关键词 | schottky barrier (sb) metal-semiconductor (ms) interfaces hydrogen zero bias annealing (zba) reverse bias annealing (rba) unified defect model crystalline semiconductors states |
| ISSN号 | 1001-6511 |
| 中文摘要 | Hydrogen can decrease the Schottky barrier height (SBH) of Ti/n diodes as much as 0.18 eV. Zero bias annealing (ZBA) makes the SBHs of Ti/n-GaAs diodes containing hydrogen decrease and reverse bias annealing (RBA) makes them increase. When RBA at 100-degrees-C lasts for 2 h or more, the SBHs haw a one-to-one correlation with the biases of RBA and the larger the bias applied, the higher the SBH is. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38829]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | S. X. Jin,M. H. Yuan,L. P. Wang,et al. CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING[J]. Science in China Series a-Mathematics Physics Astronomy,1994,37(6):730-737. |
| APA | S. X. Jin,M. H. Yuan,L. P. Wang,H. Z. Song,H. P. Wang,&G. G. Qin.(1994).CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING.Science in China Series a-Mathematics Physics Astronomy,37(6),730-737. |
| MLA | S. X. Jin,et al."CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING".Science in China Series a-Mathematics Physics Astronomy 37.6(1994):730-737. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。