AMORPHIZATION PHENOMENON IN NI AMORPHOUS SI MULTILAYERS
文献类型：期刊论文
| 作者 | W. H. Wang ; W. K. Wang |
| 刊名 | Journal of Materials Research
 |
| 出版日期 | 1994 |
| 卷号 | 9期号:2页码:401-405 |
| 关键词 | thin-films silicide formation amorphous si ti-si state nucleation interface systems model alloy |
| ISSN号 | 0884-2914 |
| 中文摘要 | Interfacial reactions of Ni/amorphous Si(a-Si) multilayers are studied by means of transmission electron microscopy (TEM) and cross-sectional transmission electron microscopy (TEM). Transformation from a crystalline to an amorphous structure has been observed in as-deposited Ni/a-Si multilayers with small modulation periods. This phenomenon is suggested to be due to interdiffusion-induced solid state amorphization which is facilitated by the high density of interface in the shorter modulation period multilayers. A thermodynamic and kinetic explanation is given for this phenomenon. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38936]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | W. H. Wang,W. K. Wang. AMORPHIZATION PHENOMENON IN NI AMORPHOUS SI MULTILAYERS[J]. Journal of Materials Research,1994,9(2):401-405. |
| APA | W. H. Wang,&W. K. Wang.(1994).AMORPHIZATION PHENOMENON IN NI AMORPHOUS SI MULTILAYERS.Journal of Materials Research,9(2),401-405. |
| MLA | W. H. Wang,et al."AMORPHIZATION PHENOMENON IN NI AMORPHOUS SI MULTILAYERS".Journal of Materials Research 9.2(1994):401-405. |
入库方式： OAI收割
来源：金属研究所
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