EFFECT OF BIAS ANNEALING ON AU/N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION
文献类型：期刊论文
| 作者 | M. H. Yuan ; Y. Q. Jia ; G. G. Qin |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 1994 |
| 卷号 | 76期号:9页码:5592-5594 |
| 关键词 | n-type gaas crystalline semiconductors ti/n-gaas states diodes |
| ISSN号 | 0021-8979 |
| 中文摘要 | The Au/n-Si Schottky barrier (SB) which contains hydrogen has a 0.10 eV lower SB height (SBH) than that without hydrogen. For the hydrogen-containing SB, zero bias annealing (ZBA) decreases the SBH while reverse bias annealing (RBA) increases it. In addition, ZBA and RBA cycling experiments have been made which reveal a reversible change of the SBH within at least four cycles. The annealing temperature of ZBA and especially of RBA influences the SBH. We interpret the above effect in terms of an interaction between hydrogen and metal-semiconductor interface states. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/38962]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | M. H. Yuan,Y. Q. Jia,G. G. Qin. EFFECT OF BIAS ANNEALING ON AU/N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION[J]. Journal of Applied Physics,1994,76(9):5592-5594. |
| APA | M. H. Yuan,Y. Q. Jia,&G. G. Qin.(1994).EFFECT OF BIAS ANNEALING ON AU/N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION.Journal of Applied Physics,76(9),5592-5594. |
| MLA | M. H. Yuan,et al."EFFECT OF BIAS ANNEALING ON AU/N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION".Journal of Applied Physics 76.9(1994):5592-5594. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。