EMPIRICAL-POTENTIAL STUDIES ON THE STRUCTURAL-PROPERTIES OF SMALL SILICON CLUSTERS
文献类型：期刊论文
| 作者 | X. G. Gong |
| 刊名 | Physical Review B
 |
| 出版日期 | 1993 |
| 卷号 | 47期号:4页码:2329-2332 |
| 关键词 | abinitio molecular-dynamics small si clusters equilibrium structures microclusters fragmentation simulation surface phases |
| ISSN号 | 0163-1829 |
| 中文摘要 | An empirical potential for silicon has been developed. Molecular-dynamics methods and simulated annealing techniques have been used to study the structural properties of small silicon clusters with this potential. A detailed comparison has been made between our results and those obtained from other theoretical methods. It is found that our results are close to those obtained using ab initio techniques. A significant improvement over other empirical potentials has been made. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/39014]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. G. Gong. EMPIRICAL-POTENTIAL STUDIES ON THE STRUCTURAL-PROPERTIES OF SMALL SILICON CLUSTERS[J]. Physical Review B,1993,47(4):2329-2332. |
| APA | X. G. Gong.(1993).EMPIRICAL-POTENTIAL STUDIES ON THE STRUCTURAL-PROPERTIES OF SMALL SILICON CLUSTERS.Physical Review B,47(4),2329-2332. |
| MLA | X. G. Gong."EMPIRICAL-POTENTIAL STUDIES ON THE STRUCTURAL-PROPERTIES OF SMALL SILICON CLUSTERS".Physical Review B 47.4(1993):2329-2332. |
入库方式： OAI收割
来源：金属研究所
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