INTERFACIAL REACTIONS ON ANNEALING CU/AL MULTILAYER THIN-FILMS
文献类型：期刊论文
| 作者 | H. G. Jiang ; J. Y. Dai ; H. Y. Tong ; B. Z. Ding ; Q. H. Song ; Z. Q. Hu |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 1993 |
| 卷号 | 74期号:10页码:6165-6169 |
| ISSN号 | 0021-8979 |
| 关键词 | growth kinetics copper interdiffusion aluminum couples bilayers silicon |
| 中文摘要 | Thin film reactions of Cu/Al multilayer films were investigated by differentia scanning calorimetry and transmission electron microscopy. Sequential intermetallic compound formation was found in the temperature range from 300 to 620 K. With excess copper present in the as-deposited trilayer and multilayer films, the observed sequence was CuAl2 and Cu9Al4, and the interfacial reactions were controlled by interfacial and grain boundary diffusion. The activation energies for the formation of CuAl2 and Cu9Al4 are 0.78+/-0.11 and 0.83+/-0.2 eV, respectively. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/39034]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | H. G. Jiang,J. Y. Dai,H. Y. Tong,et al. INTERFACIAL REACTIONS ON ANNEALING CU/AL MULTILAYER THIN-FILMS[J]. Journal of Applied Physics,1993,74(10):6165-6169. |
| APA | H. G. Jiang,J. Y. Dai,H. Y. Tong,B. Z. Ding,Q. H. Song,&Z. Q. Hu.(1993).INTERFACIAL REACTIONS ON ANNEALING CU/AL MULTILAYER THIN-FILMS.Journal of Applied Physics,74(10),6165-6169. |
| MLA | H. G. Jiang,et al."INTERFACIAL REACTIONS ON ANNEALING CU/AL MULTILAYER THIN-FILMS".Journal of Applied Physics 74.10(1993):6165-6169. |
入库方式： OAI收割
来源：金属研究所
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