ELECTRONIC STATES IN GAAS-ALAS LATERAL-SURFACE SUPERLATTICES PRODUCED BY DEPOSITION OF ALAS AND GAAS FRACTIONAL LAYERS ON (001) VICINAL GAAS SUBSTRATES
文献类型：期刊论文
| 作者 | H. Sun |
| 刊名 | Physical Review B
 |
| 出版日期 | 1992 |
| 卷号 | 46期号:19页码:12371-12376 |
| 关键词 | quantum-well structures optical-properties wires gas |
| ISSN号 | 0163-1829 |
| 中文摘要 | The electronic energy subbands and minigaps in lateral-surface superlattices (LSSL's) produced by deposition of AlAs and GaAs fractional layers on (001) vicinal GaAs substrates were predicated by variational calculations. A coordinate transformation was introduced in the calculation that transforms the LSSL's with periodically structured interfaces to quantum wells with planar interfaces so that the boundary conditions of the electronic wave functions on the LSSL interfaces can be satisfied exactly. The calculations showed that our theory gives lower subband energies than those predicated by other variational calculations. The dependence of the energy minigaps between the first and second subbands on the LSSL structural parameters, such as the average widths of the LSSL's and the periods of their interface structures, was investigated. In the calculation, the barrier between GaAs and AlAs was assumed to be finite (= 1.06 eV) and infinite. The infinitely high potential-barrier approximation (IHPBA) overestimates the energy minigap by 50% when the average width of the LSSL is 100 angstrom, and it reduces to 25% when the width is 200 angstrom. IHPBA does not work well when the average widths of the LSSL's are less than 200 angstrom. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/39289]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | H. Sun. ELECTRONIC STATES IN GAAS-ALAS LATERAL-SURFACE SUPERLATTICES PRODUCED BY DEPOSITION OF ALAS AND GAAS FRACTIONAL LAYERS ON (001) VICINAL GAAS SUBSTRATES[J]. Physical Review B,1992,46(19):12371-12376. |
| APA | H. Sun.(1992).ELECTRONIC STATES IN GAAS-ALAS LATERAL-SURFACE SUPERLATTICES PRODUCED BY DEPOSITION OF ALAS AND GAAS FRACTIONAL LAYERS ON (001) VICINAL GAAS SUBSTRATES.Physical Review B,46(19),12371-12376. |
| MLA | H. Sun."ELECTRONIC STATES IN GAAS-ALAS LATERAL-SURFACE SUPERLATTICES PRODUCED BY DEPOSITION OF ALAS AND GAAS FRACTIONAL LAYERS ON (001) VICINAL GAAS SUBSTRATES".Physical Review B 46.19(1992):12371-12376. |
入库方式： OAI收割
来源：金属研究所
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