DONOR IMPURITY STATES ON STRUCTURED SEMICONDUCTOR INTERFACES
文献类型：期刊论文
| 作者 | H. Sun ; S. W. Gu |
| 刊名 | Physical Review B
 |
| 出版日期 | 1992 |
| 卷号 | 46期号:4页码:2244-2249 |
| 关键词 | quantum wells shallow-donor si/sio2 interface vicinal surfaces confinement resistance roughness spectra energy |
| ISSN号 | 1098-0121 |
| 中文摘要 | Ground-state energies of shallow states of donor impurities on periodically structured interfaces formed by two semiconductors, such as GaAs/Ga1-xAlxAs and Si/SiO2 interfaces, are calculated variationally with the approximation that interfaces represent infinitely high potential barriers. The results show that the ground-state energies of the interface impurity states can be strongly affected by interface structures in GaAs/Ga1-xAlxAs lateral surface superlattices produced by molecular-beam-epitaxy growth of AlAs/GaAs fractional-layer superlattices on [001] vicinal GaAs substrates and on SiO2/Si interfaces for Si with (001) orientation. The effects of the interface defects on the interface impurity states are negligible for Si/SiO2 interfaces when the density of interface defects is less than 10(10)/cm2. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/39290]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | H. Sun,S. W. Gu. DONOR IMPURITY STATES ON STRUCTURED SEMICONDUCTOR INTERFACES[J]. Physical Review B,1992,46(4):2244-2249. |
| APA | H. Sun,&S. W. Gu.(1992).DONOR IMPURITY STATES ON STRUCTURED SEMICONDUCTOR INTERFACES.Physical Review B,46(4),2244-2249. |
| MLA | H. Sun,et al."DONOR IMPURITY STATES ON STRUCTURED SEMICONDUCTOR INTERFACES".Physical Review B 46.4(1992):2244-2249. |
入库方式： OAI收割
来源：金属研究所
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