DONOR IMPURITY STATES ON ROUGH SEMICONDUCTOR INTERFACES
文献类型：期刊论文
| 作者 | H. Sun ; S. W. Gu |
| 刊名 | Communications in Theoretical Physics
 |
| 出版日期 | 1992 |
| 卷号 | 17期号:2页码:229-234 |
| 关键词 | shallow-donor quantum wells spectra energy |
| ISSN号 | 0253-6102 |
| 中文摘要 | Ground state energies of shallow states of donor impurities on cosine-shaped, periodically rough interfaces formed by two isotropic semiconductors, such as GaAs/Ga1-xAlxAs or GaAs/vacuum, are calculated variationally with the approximation that the interfaces represent infinitely high potential barriers. The results show that changes in the ground state energies of interfaces impurity states caused by rough interface are not negligible especially for GaAs/Ga1-xAlxAs interfaces with sharp or dense interface defects. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/39291]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | H. Sun,S. W. Gu. DONOR IMPURITY STATES ON ROUGH SEMICONDUCTOR INTERFACES[J]. Communications in Theoretical Physics,1992,17(2):229-234. |
| APA | H. Sun,&S. W. Gu.(1992).DONOR IMPURITY STATES ON ROUGH SEMICONDUCTOR INTERFACES.Communications in Theoretical Physics,17(2),229-234. |
| MLA | H. Sun,et al."DONOR IMPURITY STATES ON ROUGH SEMICONDUCTOR INTERFACES".Communications in Theoretical Physics 17.2(1992):229-234. |
入库方式： OAI收割
来源：金属研究所
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