ELECTRONIC-STRUCTURE AND MAGNETISM OF FE-GE INTERFACES
文献类型：期刊论文
| 作者 | D. C. Tian ; Q. Jiang |
| 刊名 | Journal of Physics-Condensed Matter
 |
| 出版日期 | 1992 |
| 卷号 | 4期号:3页码:799-808 |
| 关键词 | spin polarization surface magnetization recursion method states iron films ni |
| ISSN号 | 0953-8984 |
| 中文摘要 | The local electronic density of states (LDOS) has been calculated for Fe-Ge(110), Fe-Ge(111) and Fe-Ge(100) interfaces and neighbouring atomic planes using the recursion method. Interface states are found to exist within the mutual gaps of the constituent atoms and strongly depending on the local atomic environments. The most excess LDOSS are found for Fe-Ge(111) interface and the least for Fe-Ge(110). The magnetic moments for Fe atoms are found to decrease when the Fe layer approaches the interface boundary, which is in accord with the experiments. The electron spin polarization parameters evaluated from the LDOS are qualitatively consistent with experimental measurements. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/39295]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | D. C. Tian,Q. Jiang. ELECTRONIC-STRUCTURE AND MAGNETISM OF FE-GE INTERFACES[J]. Journal of Physics-Condensed Matter,1992,4(3):799-808. |
| APA | D. C. Tian,&Q. Jiang.(1992).ELECTRONIC-STRUCTURE AND MAGNETISM OF FE-GE INTERFACES.Journal of Physics-Condensed Matter,4(3),799-808. |
| MLA | D. C. Tian,et al."ELECTRONIC-STRUCTURE AND MAGNETISM OF FE-GE INTERFACES".Journal of Physics-Condensed Matter 4.3(1992):799-808. |
入库方式： OAI收割
来源：金属研究所
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