NATIVE DEFECTS IN A (GAP)1/(INP)1 STRAINED-LAYER SUPERLATTICE - LOCAL ELECTRONIC-STRUCTURE AND DIFFUSION MECHANISM
文献类型：期刊论文
| 作者 | E. G. Wang ; D. S. Wang |
| 刊名 | Journal of Physics-Condensed Matter
 |
| 出版日期 | 1992 |
| 卷号 | 4期号:5页码:1311-1321 |
| 关键词 | quantum-well structures modulation-doped heterojunctions detected magnetic-resonance alas/gaas superlattices binding-energy impurity spectra donors gaas states |
| ISSN号 | 0953-8984 |
| 中文摘要 | The local electronic structure of intrinsic defects, including antisites, interstitials, vacancies and complexes with themselves or with Si impurities, in a (GaP)1/(lnP)1 (001) strained-layer superlattice determined by the Keating model, is calculated using a developed recursion method. Besides the localized states obtained, attention is paid to the electronic occupancy on various defects. A general consequence of describing the influence of isolated defects on the electron distribution of their neighbours is given. It is found that the charged state of an atom will be changed when it becomes an antisite. A closely bound (I(p)-P(III)) (III - Ga or In) pair, formed by coulombic interaction, will induce some states in energy gap. No evidence is found anywhere of Et-2-like behaviour in this system. Some novel diffusion mechanisms, based on I(p) and V(p) complex formation and dissociation, are presented. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/39302]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | E. G. Wang,D. S. Wang. NATIVE DEFECTS IN A (GAP)1/(INP)1 STRAINED-LAYER SUPERLATTICE - LOCAL ELECTRONIC-STRUCTURE AND DIFFUSION MECHANISM[J]. Journal of Physics-Condensed Matter,1992,4(5):1311-1321. |
| APA | E. G. Wang,&D. S. Wang.(1992).NATIVE DEFECTS IN A (GAP)1/(INP)1 STRAINED-LAYER SUPERLATTICE - LOCAL ELECTRONIC-STRUCTURE AND DIFFUSION MECHANISM.Journal of Physics-Condensed Matter,4(5),1311-1321. |
| MLA | E. G. Wang,et al."NATIVE DEFECTS IN A (GAP)1/(INP)1 STRAINED-LAYER SUPERLATTICE - LOCAL ELECTRONIC-STRUCTURE AND DIFFUSION MECHANISM".Journal of Physics-Condensed Matter 4.5(1992):1311-1321. |
入库方式： OAI收割
来源：金属研究所
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