AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON
文献类型：期刊论文
| 作者 | E. Wu ; X. C. Xi ; X. T. Lu ; D. Y. Shen ; X. M. Wang ; G. G. Qin |
| 刊名 | Science in China Series a-Mathematics Physics Astronomy
 |
| 出版日期 | 1992 |
| 卷号 | 35期号:4页码:437-442 |
| 关键词 | defects epr ir absorption peak hyperfine splitting proton-implantation neutron-irradiated silicon charge state hydrogen |
| ISSN号 | 1001-6511 |
| 中文摘要 | A new EPR defect (labeled Si-PK5) and two previously known defects (Si-S1 and Si-S2) are observed in proton-implanted N-type FZ-lilicon. Our results indicate that Si-PK5 has trigonal symmetry with the <111> direction as its symmetry axis. Its paramagnetic parameters are S = 1/2, g(parallel-to) = 2.0078 and g(perpendicular-to) = 2.0174. According to the empirical methods of classifying defects given by Lee and Corbett and by Sieverts. Si-Pk5 presumably has the structure of bond-centered interstitial. As for Si-S2, the hyperfine splitting of one equivalent Si-29 has been observed for the first time. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/39326]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | E. Wu,X. C. Xi,X. T. Lu,et al. AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON[J]. Science in China Series a-Mathematics Physics Astronomy,1992,35(4):437-442. |
| APA | E. Wu,X. C. Xi,X. T. Lu,D. Y. Shen,X. M. Wang,&G. G. Qin.(1992).AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON.Science in China Series a-Mathematics Physics Astronomy,35(4),437-442. |
| MLA | E. Wu,et al."AN EPR STUDY ON PROTON-IMPLANTED DEFECT IN FZ-SILICON".Science in China Series a-Mathematics Physics Astronomy 35.4(1992):437-442. |
入库方式： OAI收割
来源：金属研究所
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