ELECTRONIC STATES IN QUANTUM-WELLS WITH INTERFACE DEFECTS
文献类型：期刊论文
| 作者 | H. Sun ; X. Zhang ; S. W. Gu |
| 刊名 | Communications in Theoretical Physics
 |
| 出版日期 | 1991 |
| 卷号 | 16期号:3页码:281-288 |
| 关键词 | optical characterization roughness disorder growth |
| ISSN号 | 0253-6102 |
| 中文摘要 | Effects of interface defects on electronic states in quantum wells (QWs) are investigated theoretically by introducing a coordinate transformation that transforms QWs with defective interfaces to those with planar interfaces plus an effective potential associated with interface defects. The interface defects are idealized as a cylindrical hollow protruding into the barrier materials on one of the interfaces. Electronic ground state energies are calculated variationally as functions of the defect lateral sizes. For GaAs-Ga1-xAlxAs QWs with the well width d less than 150 angstrom, the changes in electronic energies due to interface defects will produce sizable effects on optical experiments, such as broadenings of excitation spectra of QWs. But our calculation predicts smaller spectrum broadenings than those predicated by the previous theory for the same interface disorder. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/39447]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | H. Sun,X. Zhang,S. W. Gu. ELECTRONIC STATES IN QUANTUM-WELLS WITH INTERFACE DEFECTS[J]. Communications in Theoretical Physics,1991,16(3):281-288. |
| APA | H. Sun,X. Zhang,&S. W. Gu.(1991).ELECTRONIC STATES IN QUANTUM-WELLS WITH INTERFACE DEFECTS.Communications in Theoretical Physics,16(3),281-288. |
| MLA | H. Sun,et al."ELECTRONIC STATES IN QUANTUM-WELLS WITH INTERFACE DEFECTS".Communications in Theoretical Physics 16.3(1991):281-288. |
入库方式： OAI收割
来源：金属研究所
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