LOCALIZED STATES INDUCED BY SELF-INTERSTITIAL DEFECTS IN ULTRA-THIN GAP INP STRAINED-LAYER SUPERLATTICES
文献类型：期刊论文
| 作者 | E. G. Wang ; D. S. Wang |
| 刊名 | Physica Status Solidi B-Basic Research
 |
| 出版日期 | 1991 |
| 卷号 | 167期号:1页码:189-196 |
| 关键词 | alas/gaas superlattices electronic-structure optical-properties native defects semiconductors stability |
| ISSN号 | 0370-1972 |
| 中文摘要 | By the recursion method a theoretical study is made of the electronic structure of a (001)-oriented (GaP)1/(InP)1 strained layer superlattice with interstitial defects. A Keating model is used to determine the structural parameters. The density of states of all possible interstitials and their neighbors in the stable monolayer superlattice are calculated. Some new self and impurity diffusion mechanisms, which are not found in a GaAs/AlAs matched superlattice, are proposed for the first time. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/39456]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | E. G. Wang,D. S. Wang. LOCALIZED STATES INDUCED BY SELF-INTERSTITIAL DEFECTS IN ULTRA-THIN GAP INP STRAINED-LAYER SUPERLATTICES[J]. Physica Status Solidi B-Basic Research,1991,167(1):189-196. |
| APA | E. G. Wang,&D. S. Wang.(1991).LOCALIZED STATES INDUCED BY SELF-INTERSTITIAL DEFECTS IN ULTRA-THIN GAP INP STRAINED-LAYER SUPERLATTICES.Physica Status Solidi B-Basic Research,167(1),189-196. |
| MLA | E. G. Wang,et al."LOCALIZED STATES INDUCED BY SELF-INTERSTITIAL DEFECTS IN ULTRA-THIN GAP INP STRAINED-LAYER SUPERLATTICES".Physica Status Solidi B-Basic Research 167.1(1991):189-196. |
入库方式： OAI收割
来源：金属研究所
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