STRUCTURAL STABILITY AND ELECTRONIC DENSITY OF STATES IN (001)-ORIENTED AND (111)-ORIENTED (GAP)1 (INP)1 STRAINED-LAYER SUPERLATTICES
文献类型:期刊论文
作者 | E. G. Wang ; J. Zi ; D. S. Wang |
刊名 | Journal of Physics-Condensed Matter
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出版日期 | 1991 |
卷号 | 3期号:36页码:6977-6987 |
关键词 | hydrogenic impurity states quantum-well structures alas/gaas superlattices semiconductors transitions defects order |
ISSN号 | 0953-8984 |
中文摘要 | The stability of (001)- and (111)-oriented (GaP)1/(InP)1 strained-layer superlattices (SLSS) is studied by the Keating model. The obtained deviations of the In-P and Ga-P bond lengths of the (001) stable superlattice structure from the constituent bulk lengths are -1.0% and 0.8%, respectively. A recursion method is used to calculate the bulk and surface electronic structures for both (001) and (111) (GaP)1/(InP)1 SLSS. It is found that the band gaps of the (001) and (111) structures, respectively, are smaller by 0.28 eV and 0.31 eV than the average of those of bulk InP and GaP. From the total-structural-energy and Fermi level calculation, we conclude that the strained-monolayer superlattice growth along the (001) direction is more stable than that along the (111) direction. A qualitative trend is proposed to elucidate the influence of strain on the electronic occupation in a strained-layer superlattice fabricated from III-V semiconductors, with the aid of two auxiliary systems. The localized states of a Si impurity in these systems are calculated. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/39457] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | E. G. Wang,J. Zi,D. S. Wang. STRUCTURAL STABILITY AND ELECTRONIC DENSITY OF STATES IN (001)-ORIENTED AND (111)-ORIENTED (GAP)1 (INP)1 STRAINED-LAYER SUPERLATTICES[J]. Journal of Physics-Condensed Matter,1991,3(36):6977-6987. |
APA | E. G. Wang,J. Zi,&D. S. Wang.(1991).STRUCTURAL STABILITY AND ELECTRONIC DENSITY OF STATES IN (001)-ORIENTED AND (111)-ORIENTED (GAP)1 (INP)1 STRAINED-LAYER SUPERLATTICES.Journal of Physics-Condensed Matter,3(36),6977-6987. |
MLA | E. G. Wang,et al."STRUCTURAL STABILITY AND ELECTRONIC DENSITY OF STATES IN (001)-ORIENTED AND (111)-ORIENTED (GAP)1 (INP)1 STRAINED-LAYER SUPERLATTICES".Journal of Physics-Condensed Matter 3.36(1991):6977-6987. |
入库方式: OAI收割
来源:金属研究所
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