Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications
文献类型：期刊论文
| 作者 | J. M. Liu ; G. H. Shi ; L. C. Yu ; T. L. Li ; Z. G. Liu ; J. Y. Dai |
| 刊名 | Applied Physics a-Materials Science & Processing
 |
| 出版日期 | 2005 |
| 卷号 | 80期号:8页码:1775-1779 |
| 关键词 | hafnium oxide si stability silicon transition dioxide devices hfo2 |
| ISSN号 | 0947-8396 |
| 中文摘要 | Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface. |
| 原文出处 | |
| 公开日期 | 2012-05-17 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/39998]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | J. M. Liu,G. H. Shi,L. C. Yu,et al. Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications[J]. Applied Physics a-Materials Science & Processing,2005,80(8):1775-1779. |
| APA | J. M. Liu,G. H. Shi,L. C. Yu,T. L. Li,Z. G. Liu,&J. Y. Dai.(2005).Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications.Applied Physics a-Materials Science & Processing,80(8),1775-1779. |
| MLA | J. M. Liu,et al."Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications".Applied Physics a-Materials Science & Processing 80.8(2005):1775-1779. |
入库方式： OAI收割
来源：金属研究所
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