Surface transfer hole doping of epitaxial graphene using MoO3 thin film
文献类型：期刊论文
| 作者 | Chen ZY ; Santoso I ; Wang R ; Xie LF ; Mao HY ; Huang H ; Wang YZ ; Gao XY ; Chen ZK ; Ma DG ; Wee ATS ; Chen W |
| 刊名 | applied physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 96期号:21页码:文献编号：213104 |
| 关键词 | ELECTRONIC-STRUCTURE OXIDES 6H-SIC(0001) |
| ISSN号 | 0003-6951 |
| 通讯作者 | chen w |
| 中文摘要 | synchrotron-based in situ photoelectron spectroscopy investigations demonstrate effective surface transfer p-type doping of epitaxial graphene (eg) thermally grown on 4h-sic(0001) via the deposition of moo3 thin film on top. the large work function difference between eg and moo3 facilitates electron transfer from eg to the moo3 thin film. this leads to hole accumulation in the eg layer with an areal hole density of about 1.0x10(13) cm(-2), and places the fermi level 0.38 ev below the graphene dirac point. (c) 2010 american institute of physics. [doi: 10.1063/1.3441263] |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000278183200057 |
| 公开日期 | 2012-06-06 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/43694]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen ZY,Santoso I,Wang R,et al. Surface transfer hole doping of epitaxial graphene using MoO3 thin film[J]. applied physics letters,2010,96(21):文献编号：213104. |
| APA | Chen ZY.,Santoso I.,Wang R.,Xie LF.,Mao HY.,...&Chen W.(2010).Surface transfer hole doping of epitaxial graphene using MoO3 thin film.applied physics letters,96(21),文献编号：213104. |
| MLA | Chen ZY,et al."Surface transfer hole doping of epitaxial graphene using MoO3 thin film".applied physics letters 96.21(2010):文献编号：213104. |
入库方式： OAI收割
来源：长春应用化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。