Epitaxial Growth and Magnetic Properties of Mn-Ga Thin Films on GaSb (001)
文献类型:期刊论文
作者 | Feng WW ; Dung DD ; Shin Y ; Van Thiet D ; Cho S ; Hao X |
刊名 | journal of the korean physical society
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出版日期 | 2010 |
卷号 | 56期号:4页码:1382-1386 |
关键词 | PERPENDICULAR MAGNETIZATION CRYSTAL-STRUCTURE PHASE ANISOTROPY ALLOYS |
ISSN号 | 0374-4884 |
通讯作者 | feng ww |
中文摘要 | we repoit on the epitaxial stabilization of tetiagonal do22-type mn-3 delta ga (delta = 0 to 2) films deposited on gasb(001) by using a molecular beam epitaxy technique. the structural and the magnetic properties as functions of the mn concentration are discussed. the growth orientation of mncla(1.14)//gasb(001) caused the easy magnetocrystalline direction to be located in the film plane in out experiment, which differed from the ordinarily observed perpendicular magnatic-anisotropy of mn3-delta ga films the increase in coercivity with increasing temperature for the mnga film is possibly clue to on increase in the anisotropy energy the mil ga film exhibited an enhanced arusottopy energy with respect to mn3ga film. an increasing average saturation magnetization per mn atom with decreasing mn content was also observed, indicating a fermmagnetic ordering with partially compensating moments of the two crystallographically different, mn sites in the do22 structure |
收录类别 | SCI收录期刊论文 |
语种 | 英语 |
WOS记录号 | WOS:000276783400009 |
公开日期 | 2012-06-06 |
源URL | [http://ir.ciac.jl.cn/handle/322003/43780] ![]() |
专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
推荐引用方式 GB/T 7714 | Feng WW,Dung DD,Shin Y,et al. Epitaxial Growth and Magnetic Properties of Mn-Ga Thin Films on GaSb (001)[J]. journal of the korean physical society,2010,56(4):1382-1386. |
APA | Feng WW,Dung DD,Shin Y,Van Thiet D,Cho S,&Hao X.(2010).Epitaxial Growth and Magnetic Properties of Mn-Ga Thin Films on GaSb (001).journal of the korean physical society,56(4),1382-1386. |
MLA | Feng WW,et al."Epitaxial Growth and Magnetic Properties of Mn-Ga Thin Films on GaSb (001)".journal of the korean physical society 56.4(2010):1382-1386. |
入库方式: OAI收割
来源:长春应用化学研究所
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