中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Epitaxial Growth and Magnetic Properties of Mn-Ga Thin Films on GaSb (001)

文献类型:期刊论文

作者Feng WW ; Dung DD ; Shin Y ; Van Thiet D ; Cho S ; Hao X
刊名journal of the korean physical society
出版日期2010
卷号56期号:4页码:1382-1386
关键词PERPENDICULAR MAGNETIZATION CRYSTAL-STRUCTURE PHASE ANISOTROPY ALLOYS
ISSN号0374-4884
通讯作者feng ww
中文摘要we repoit on the epitaxial stabilization of tetiagonal do22-type mn-3 delta ga (delta = 0 to 2) films deposited on gasb(001) by using a molecular beam epitaxy technique. the structural and the magnetic properties as functions of the mn concentration are discussed. the growth orientation of mncla(1.14)//gasb(001) caused the easy magnetocrystalline direction to be located in the film plane in out experiment, which differed from the ordinarily observed perpendicular magnatic-anisotropy of mn3-delta ga films the increase in coercivity with increasing temperature for the mnga film is possibly clue to on increase in the anisotropy energy the mil ga film exhibited an enhanced arusottopy energy with respect to mn3ga film. an increasing average saturation magnetization per mn atom with decreasing mn content was also observed, indicating a fermmagnetic ordering with partially compensating moments of the two crystallographically different, mn sites in the do22 structure
收录类别SCI收录期刊论文
语种英语
WOS记录号WOS:000276783400009
公开日期2012-06-06
源URL[http://ir.ciac.jl.cn/handle/322003/43780]  
专题长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式
GB/T 7714
Feng WW,Dung DD,Shin Y,et al. Epitaxial Growth and Magnetic Properties of Mn-Ga Thin Films on GaSb (001)[J]. journal of the korean physical society,2010,56(4):1382-1386.
APA Feng WW,Dung DD,Shin Y,Van Thiet D,Cho S,&Hao X.(2010).Epitaxial Growth and Magnetic Properties of Mn-Ga Thin Films on GaSb (001).journal of the korean physical society,56(4),1382-1386.
MLA Feng WW,et al."Epitaxial Growth and Magnetic Properties of Mn-Ga Thin Films on GaSb (001)".journal of the korean physical society 56.4(2010):1382-1386.

入库方式: OAI收割

来源:长春应用化学研究所

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