A photosensitive copolymer for the gate insulator of organic thin-film transistors
文献类型:期刊论文
作者 | Zhang XH ; Wang H ; Wang L ; Cui ZC ; Yan DH |
刊名 | applied physics a-materials science & processing
![]() |
出版日期 | 2010 |
卷号 | 99期号:1页码:85-91 |
关键词 | FIELD-EFFECT TRANSISTORS LOW-TEMPERATURE LOW-VOLTAGE SIDE-CHAIN PERFORMANCE TRANSPORT ORIENTATION DIELECTRICS INTERFACE POLYIMIDE |
ISSN号 | 0947-8396 |
通讯作者 | cui zc |
中文摘要 | a novel cross-linkable copolymer for the gate insulators of organic thin-film transistors (otfts) was synthesized by free radical copolymerization with methyl methacrylate and ethylene methylacrylate cinnamoylate. copolymers of molecular weights (mn: 109200-160000 g mol(-1)) and polydispersities (1.59-2.24) were characterized by ftir and nmr. spin-coated thin films had smooth surfaces with the root-mean-square (rms) surface roughness of 0.23 nm, 0.41 nm, respectively, before and after uv irradiation. exposure of the copolymers to uv light produced cross-linking of the polymeric chains that could be confirmed by comparing the ftir and uv spectra recorded prior and after irradiation. moreover, the vanadyl-phthalocyanine (vopc) otfts with the photosensitive copolymer as gate insulator were fabricated and found to exhibit a carrier mobility of 0.25 cm(2)/v s, an on/off ratio of 10(4). |
收录类别 | SCI收录期刊论文 |
语种 | 英语 |
WOS记录号 | WOS:000276069900013 |
公开日期 | 2012-06-07 |
源URL | [http://ir.ciac.jl.cn/handle/322003/43826] ![]() |
专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
推荐引用方式 GB/T 7714 | Zhang XH,Wang H,Wang L,et al. A photosensitive copolymer for the gate insulator of organic thin-film transistors[J]. applied physics a-materials science & processing,2010,99(1):85-91. |
APA | Zhang XH,Wang H,Wang L,Cui ZC,&Yan DH.(2010).A photosensitive copolymer for the gate insulator of organic thin-film transistors.applied physics a-materials science & processing,99(1),85-91. |
MLA | Zhang XH,et al."A photosensitive copolymer for the gate insulator of organic thin-film transistors".applied physics a-materials science & processing 99.1(2010):85-91. |
入库方式: OAI收割
来源:长春应用化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。