Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions
文献类型：期刊论文
| 作者 | Wang H ; Li CH ; Wang LJ ; Wang HB ; Yan DH |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:2页码:文献编号：028502 |
| 关键词 | FIELD-EFFECT TRANSISTORS ORGANIC TRANSISTORS GATE DIELECTRICS ELECTRONICS PERFORMANCE TRANSPORT DISPLAYS |
| ISSN号 | 0256-307x |
| 通讯作者 | yan dh |
| 中文摘要 | flexible vanadyl-phthalocyanine (vopc) thin-film transistors are fabricated by the weak epitaxy growth (weg) method. the devices show a mobility of 0.5 cm(2)/vs, an on/off ratio of 10(5) and a low leakage current of 10(-9) a. the performances exhibit strong dependence on bending conditions and reversible change can be found when the bending strain is less than 1.5%. this results from the change of the trap density calculated by subthreshold slopes. the results indicate that vopc films fabricated by the weg method have good durability to flexing and possess great potential in flexible electronics. |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000274360800085 |
| 公开日期 | 2012-06-07 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/43939]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang H,Li CH,Wang LJ,et al. Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions[J]. chinese physics letters,2010,27(2):文献编号：028502. |
| APA | Wang H,Li CH,Wang LJ,Wang HB,&Yan DH.(2010).Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions.chinese physics letters,27(2),文献编号：028502. |
| MLA | Wang H,et al."Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions".chinese physics letters 27.2(2010):文献编号：028502. |
入库方式： OAI收割
来源：长春应用化学研究所
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