Improved Performance of Fluorinated Copper Phthalocyanine Thin Film Transistors UsingPara-hexaphenyl as the Inducing Layer
文献类型：期刊论文
| 作者 | Ma F ; Wang SR ; Li XG ; Yan DH |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 28期号:11 |
| 关键词 | FIELD-EFFECT TRANSISTORS WEAK EPITAXY GROWTH P-SEXIPHENYL MONOLAYER ORGANIC HETEROJUNCTION FABRICATION DRIVEN |
| ISSN号 | 0256-307x |
| 通讯作者 | wang sr |
| 中文摘要 | we demonstrate n-type organic thin film transistors (otfts) employing copper hexadecafluorophthalocyanine (cupcf(16)) as the active layer and para-hexaphenyl (p-6p) as the inducing layer. compared with the cupcf(16)-based otfts without the p-6p inducing layer, the performance of the cupcf(16)/p-6p otfts is greatly improved. the charge carrier field-effect mobility mu, on-off current ratio i(on)/i(off) and threshold voltage v(t) of the cupcf(16)/p-6p otfts are 0.07 cm(2)/v.s, 1.61 x 10(5) and 6.28 v, respectively, approaching the level of a single crystal device. the improved performance is attributed to the introduction of p-6p to form a highly oriented and continuous film of cupcf(16) with the molecular pi-pi stack direction parallel to the substrate. |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000297284600071 |
| 公开日期 | 2012-06-08 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/44254]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ma F,Wang SR,Li XG,et al. Improved Performance of Fluorinated Copper Phthalocyanine Thin Film Transistors UsingPara-hexaphenyl as the Inducing Layer[J]. chinese physics letters,2011,28(11). |
| APA | Ma F,Wang SR,Li XG,&Yan DH.(2011).Improved Performance of Fluorinated Copper Phthalocyanine Thin Film Transistors UsingPara-hexaphenyl as the Inducing Layer.chinese physics letters,28(11). |
| MLA | Ma F,et al."Improved Performance of Fluorinated Copper Phthalocyanine Thin Film Transistors UsingPara-hexaphenyl as the Inducing Layer".chinese physics letters 28.11(2011). |
入库方式： OAI收割
来源：长春应用化学研究所
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