Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes
文献类型：期刊论文
| 作者 | Yi MD ; Zhao LT ; Fan QL ; Xia XH ; Ai W ; Xie LH ; Liu XM ; Shi NE ; Wang WJ ; Wang YP ; Huang W |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2011 |
| 卷号 | 110期号:6 |
| 关键词 | DEVICES FILMS |
| ISSN号 | 0021-8979 |
| 通讯作者 | yi md |
| 中文摘要 | we demonstrated write-once-read-many-times (worm) memory devices based on graphene oxide (go) film sandwiched between ito and lif/al electrode. the devices showed irreversible electrical transition from the low conductivity (off) state to the high conductivity (on) state and the on/off current ratio between the conductivities of two states was over 5.7 x 10(4). the results of i-v data, afm and sem images indicated that the worm memory characteristics of go diodes were mainly attributed to charge trapping at go layers and interfacial properties between go and lif/al electrode. (c) 2011 american institute of physics. [doi: 10.1063/1.3639287] |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000295619300064 |
| 公开日期 | 2012-06-08 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/44346]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yi MD,Zhao LT,Fan QL,et al. Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes[J]. journal of applied physics,2011,110(6). |
| APA | Yi MD.,Zhao LT.,Fan QL.,Xia XH.,Ai W.,...&Huang W.(2011).Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes.journal of applied physics,110(6). |
| MLA | Yi MD,et al."Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes".journal of applied physics 110.6(2011). |
入库方式： OAI收割
来源：长春应用化学研究所
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