High performance vanadyl phthalocyanine thin-film transistors based on fluorobenzene end-capped quaterthiophene as the inducing layer
文献类型：期刊论文
| 作者 | Pan F ; Tian HK ; Qian XR ; Huang LZ ; Geng YH ; Yan DH |
| 刊名 | organic electronics
 |
| 出版日期 | 2011 |
| 卷号 | 12期号:8页码:1358-1363 |
| 关键词 | FIELD-EFFECT TRANSISTORS SELF-ASSEMBLED MONOLAYERS WEAK EPITAXY GROWTH ORGANIC SEMICONDUCTORS CRYSTAL-STRUCTURE PENTACENE STABILITY |
| ISSN号 | 1566-1199 |
| 通讯作者 | yan dh |
| 中文摘要 | a high performance vopc thin-film transistor based on a fluorobenzene end-capped quaterthiophene as the inducing layer is fabricated by weak epitaxy growth method. the quality of epitaxial vopc films is significantly improved. a commensurate epitaxial relationship is formed between the inducing layer and the vopc films, leading to highly ordered vopc films with large grains, which enhances the in-plane carrier transport. the field-effect mobility reaches up to 2.6 cm(2) v(1) s (1), the threshold voltage is lower than 5 v, and the on-off current ratio is higher than 10(6). the device performance has no significant degradation in ambient condition for 100 days. the high-performance and the air-stable vopc otfts promote the practical applications for large-area and flexible display. (c) 2011 elsevier b.v. all rights reserved. |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000291858500012 |
| 公开日期 | 2012-06-08 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/44448]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Pan F,Tian HK,Qian XR,et al. High performance vanadyl phthalocyanine thin-film transistors based on fluorobenzene end-capped quaterthiophene as the inducing layer[J]. organic electronics,2011,12(8):1358-1363. |
| APA | Pan F,Tian HK,Qian XR,Huang LZ,Geng YH,&Yan DH.(2011).High performance vanadyl phthalocyanine thin-film transistors based on fluorobenzene end-capped quaterthiophene as the inducing layer.organic electronics,12(8),1358-1363. |
| MLA | Pan F,et al."High performance vanadyl phthalocyanine thin-film transistors based on fluorobenzene end-capped quaterthiophene as the inducing layer".organic electronics 12.8(2011):1358-1363. |
入库方式： OAI收割
来源：长春应用化学研究所
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